Active and preferred
RoHS Compliant
Lead-free

2ED1324S12P

1200 V half-bridge gate driver IC with AMC (Active Miller Clamp), SCC (Short Circuit Clamp)
Data Sheet
package
board
ea.
in stock

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2ED1324S12P
2ED1324S12P
ea.
Data Sheet

Product details

  • Channels
    2
  • Configuration
    Half Bridge
  • Input Vcc min
    13 V
  • Isolation Type
    Functional levelshift SOI (Silicon On Insulator)
  • Output Current (Source)
    2.3 A
  • Output Current (Sink)
    2.3 A
  • Product Name
    2ED1324S12P
  • Qualification
    Industrial
  • Turn Off Propagation Delay
    500 ns
  • Turn On Propagation Delay
    500 ns
  • VBS UVLO (Off)
    11.3 V
  • VBS UVLO (On)
    12.2 V
  • VCC UVLO (Off)
    11.3 V
  • VCC UVLO (On)
    12.2 V
  • Voltage Class
    1200 V
Recommended
OPN
2ED1324S12PXUMA1
Product Status active and preferred
Infineon Package
PG-DSO-20
Package Name N/A
Packing Size 1000
Packing Type TAPE & REEL
Moisture Level 3
Moisture Packing DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
 ea. in stock

Product Status
Active
Infineon Package
PG-DSO-20
Package Name -
Packing Size 1000
Packing Type TAPE & REEL
Moisture Level 3
Moisture Packing DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
EiceDRIVER™ 1200 V half-bridge gate driver IC with 2.3 A source, 2.3 A sink current and cross conduction prevention in the sufficient creepage, clearance distance DSO-20 (300mils) package for 1200 V SiC MOSFET and IGBT power devices. The 2ED1324S12P supports Active Miller Clamp (AMC), Short Circuit Clamp (SCC) and Cross conduction prevention for the best in class switching performance in the sufficient creepage/clearance distance package DSO-20. Based on the used SOI-technology there is an excellent ruggedness on transient voltages. Since the device contains no parasitic thyristor structures, the design is very robust against parasitic latch up across the operating temperature and voltage range.

Features

  • Unique thin-film (SOI)-technology
  • Floating channel for bootstrap op.
  • Max. boots. volt. (VB node) +1225 V
  • Operating voltages < + 1200 V
  • Negative VS transient vol. immunity
  • 2.3 A/2.3 A peak output source/sink
  • Integrated over-current protection
  • ± 5% high accu. reference threshold
  • Less than 1 us over-current sens
  • Integrated Active Miller Clamp
  • Integr. short circuit clamp functi.
  • Integr. ultra-fast bootstrap diode

Documents

Documents

Design resources

Partner solutions

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